CY8C5246AXI-038 Cypress Semiconductor Corp, CY8C5246AXI-038 Datasheet - Page 65

• Manufacturer Part Number: CY8C5246AXI-038
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY8C5246AXI-038

• Lead Free Status / RoHS Status: Compliant

11.7 Memory
Specifications are valid for –40 °C  T
except where noted.
11.7.1 Flash
Table 11-40. Flash DC Specifications
Table 11-41. Flash AC Specifications
11.7.2 EEPROM
Table 11-42. EEPROM DC Specifications
Table 11-43. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL)
Table 11-44. NVL DC Specifications
Document Number: 001-55034 Rev. *G
T
T
T
T
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
WRITE
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (256 KB)
Sector erase time (16 KB)
Total device program time 
(including JTAG, and so on)
Flash endurance
Flash data retention time
Erase and program voltage
Single byte erase/write cycle time
EEPROM endurance
EEPROM data retention time
Erase and program voltage
Erase and program voltage
Description
Description
Description
Description
Description
A
 85 °C and T
PRELIMINARY
V
J
Retention period measured from
last erase cycle
Retention period measured from
last erase cycle (up to 100 K cycles)
V
DDD
 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
DDD
pin
pin
Conditions
Conditions
Conditions
Conditions
Conditions
PSoC
®
5: CY8C52 Family Datasheet
1.71
100k
Min
1.71
1.71
Min
Min
Min
Min
1M
20
20
–
–
–
–
–
–
–
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
–
–
–
–
2
–
Max
Max
Max
Max
Max
5.5
5.5
5.5
15
10
80
15
15
5
5
–
–
–
–
Page 65 of 85
program/
program/
seconds
Units
cycles
cycles
Units
erase
years
Units
Units
erase
years
Units
ms
ms
ms
ms
ms
ms
V
V
V
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