CY8C5246AXI-038 Cypress Semiconductor Corp, CY8C5246AXI-038 Datasheet - Page 66

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CY8C5246AXI-038

Manufacturer Part Number
CY8C5246AXI-038
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY8C5246AXI-038

Lead Free Status / RoHS Status
Compliant
Table 11-45. NVL AC Specifications
11.7.4 SRAM
Table 11-46. SRAM DC Specifications
Table 11-47. SRAM AC Specifications
11.7.5 External Memory Interface
Table 11-48. Asynchronous Read Cycle Specifications
Document Number: 001-55034 Rev. *G
V
F
T
Tcel
Taddrv
Taddrh
Toev
Parameter
Parameter
Parameter
Parameter
SRAM
SRAM
EM_Addr
EM_WEn
EM_Data
EM_OEn
EM_CEn
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
EMIF clock period
EM_CEn low time
EM_CEn low to EM_Addr valid
Address hold time after EM_OEn high
EM_CEn low to EM_OEn low
Description
Description
Description
Description
Toev
Taddrv
Figure 11-2. Asynchronous Read Cycle Timing
PRELIMINARY
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Tcel
Toel
Address
Tdoesu
Tdcesu
Conditions
Conditions
Conditions
Conditions
PSoC
Data
®
5: CY8C52 Family Datasheet
2 × T – 1
30.3
Min
100
Min
Min
Min
1.2
DC
1K
20
20
–5
2
Toeh
Tdoeh
Tdceh
Taddrh
Typ
Typ
Typ
Typ
2 × T + 2
Max
Max
Max
Max
40
5
5
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program/
program/
cycles
cycles
Units
erase
erase
years
years
Units
Units
Units
MHz
ns
ns
ns
ns
ns
V
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