MC9S12DG128VPVE Freescale, MC9S12DG128VPVE Datasheet - Page 111

MC9S12DG128VPVE

Manufacturer Part Number
MC9S12DG128VPVE
Description
Manufacturer
Freescale
Datasheet

Specifications of MC9S12DG128VPVE

Cpu Family
HCS12
Device Core Size
16b
Frequency (max)
50MHz
Interface Type
SCI/SPI/I2C/CAN
Total Internal Ram Size
8KB
# I/os (max)
91
Number Of Timers - General Purpose
8
Operating Supply Voltage (typ)
2.5/5V
Operating Supply Voltage (max)
2.75/5.25V
Operating Supply Voltage (min)
2.25/2.35/4.5V
On-chip Adc
2(8-chx10-bit)
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 105C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
112
Package Type
LQFP
Program Memory Type
Flash
Program Memory Size
128KB
Lead Free Status / RoHS Status
Compliant

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A.3 NVM, Flash and EEPROM
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
The minimum program and erase times shown in (Table A-11) are calculated for maximum f
maximum f
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f
A.3.1.2 Row Programming
This applies only to the Flash where up to 32 words in a row can be programmed consecutively by keeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
Freescale Semiconductor
NOTE:
bus
. The maximum times are calculated for minimum f
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
NVMOP
NVMOSC
and can be calculated according to the following formula.
NVMOP
is required for performing program or erase operations. The NVM modules
.
t
t
swpgm
t
bwpgm
brpgm
=
=
=
9
t
4
swpgm
---------------------
f
NVMOP
---------------------
f
NVMOP
1
1
+
Device User Guide — 9S12DT128DGV2/D V02.16
31 t
+
+
25
9
bwpgm
NVMOP
----------
f
----------
f
bus
bus
1
1
and a f
bus
of 2MHz.
NVMOP
and
111

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