BSM20GP60 Infineon Technologies, BSM20GP60 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSM20GP60
Manufacturer Part Number
BSM20GP60
Description
IGBT Modules 600V 20A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM20GP60.pdf
(12 pages)
Specifications of BSM20GP60
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Continuous Collector Current At 25 C
20 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
130 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM2
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM20GP60
Manufacturer:
EUPEC
Quantity:
25
Company:
Part Number:
BSM20GP60
Manufacturer:
EUPEC
Quantity:
300
Part Number:
BSM20GP60
Manufacturer:
西门子集成模块
Quantity:
20 000
Part Number:
BSM20GP60
Quantity:
50
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
T
T
T
T
T
V
V
V
f = 1MHz, T
V
V
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
T
BSM20GP60
C
C
C
C
C
C
P
vj
vj
vj
vj
C
vj
GE
GE
CE
CE
GE
GE
CE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= I
= I
= I
= I
= I
= I
= 150°C,
= 150°C
= 150°C
= 150°C,
= 25°C
125°C,
= 15V, T
= 15V, T
= V
= 25 V, V
= 0V,
= 0V,
= 0V, V
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
10µs, V
Nenn
Nenn
Nenn
Nenn
Nenn
Nenn
GE
,
,
,
,
,
,
,
GE
vj
T
T
T
GE
= 25°C
GE
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
=20V, T
= 25°C, V
=125°C, V
= 25°C,
= 125°C,
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 125°C, R
= 125°C, R
= 25°C,
2(11)
= 0 V
15V,
vj
=25°C
dI/dt =
V
V
V
V
V
V
V
R
L
L
CC
CE
CE
CC
CC
CC
CC
CC
CC
I
I
G
I
V
G
G
G
G
G
G
G
G
G
G
C
C
S
S
C
I
=
F
=
R
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
= 20 A
= 1600 V
20 A
20 A
0,5 mA
600 V
600 V
300 V
47 Ohm
47 Ohm
300 V
47 Ohm
47 Ohm
300 V
47 Ohm
47 Ohm
300 V
47 Ohm
47 Ohm
300 V
47 Ohm
75 nH
300 V
47 Ohm
75 nH
47 Ohm
360 V
1200 A/µs
R
V
V
V
V
AA’+CC’
GE(TO)
C
I
I
t
t
E
E
CE sat
V
CES
GES
I
d,on
d,off
ISOL
I
(TO)
r
SC
t
t
R
ies
T
on
off
r
f
F
min.
min.
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
1,95
250
270
2,5
2,2
5,5
1,1
0,7
1,0
0,9
0,7
50
50
50
50
30
40
80
1
2
8
-
-
-
max.
max.
1,05
10,5
2,45
500
300
0,8
6,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DB-PIM-9.xls
mWs
mWs
m
m
mA
mA
kV
nF
µA
nA
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A