BSM20GP60 Infineon Technologies, BSM20GP60 Datasheet - Page 4

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BSM20GP60

Manufacturer Part Number
BSM20GP60
Description
IGBT Modules 600V 20A PIM
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM20GP60

Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Continuous Collector Current At 25 C
20 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
130 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM2
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM20GP60
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM20GP60
Manufacturer:
EUPEC
Quantity:
300
Part Number:
BSM20GP60
Manufacturer:
西门子集成模块
Quantity:
20 000
Part Number:
BSM20GP60
Quantity:
50
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Technische Information / Technical Information
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Trans. Bremse/ Trans. Brake
Diode Bremse/ Diode Brake
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
BSM20GP60
4(11)
Paste
grease
=1W/m*K
=1W/m*K
R
R
T
T
T
M
G
thJC
thCK
op
stg
vj
min.
-40
-40
-
-
-
-
-
-
-
-
-
±10%
Al
typ.
0,08
0,04
0,08
225
180
2
3
-
-
-
-
-
-
-
-
O
3
max.
150
125
125
1,5
1,5
2,3
1
1
-
-
-
DB-PIM-9.xls
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Nm
°C
°C
°C
g

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