BSM20GP60 Infineon Technologies, BSM20GP60 Datasheet - Page 9

• Manufacturer Part Number: BSM20GP60
• Description: IGBT Modules 600V 20A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM20GP60

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
Durchlaßkennlinie der Brems-Chopper-Diode (typisch)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
Output characteristic brake-chopper-IGBT (typical)
0,5
0,2
Tj = 25°C
Tj = 125°C
0,4
1
Tj = 25°C
Tj = 125°C
BSM20GP60
1,5
0,6
V
V
CE
F
9(11)
[V]
[V]
0,8
2
2,5
1
F
I
= f (V
1,2
C
3
I
V
= f (V
GE
F
)
= 15 V
CE
)
3,5
1,4
1,6
4
DB-PIM-9.xls