MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 25
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
ROHM
Quantity:
1 001
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
MICRON
Quantity:
2 690
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 17:
Figure 18:
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
t
t
Fall and
Fall and
Notes:
Notes:
t
t
Rise (3.3V V
Rise (1.8V V
V
V
1.
2.
3.
4.
5. See TC values in Figure 21 (page 27) for approximate Rp value and TC.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
1.
2.
3.
4. See TC values in Figure 21 (page 27) for TC and approximate Rp value.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
t
t
pedance.
t
t
t
t
t
Fall and
Rise dependent on external capacitance and resistive loading and output transistor im-
Rise primarily dependent on external pull-up resistor and external capacitive loading.
Fall = 10ns at 3.3V.
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 7ns at 1.8V.
–1
-1
CC
CC
)
)
t
t
Rise calculated at 10% and 90% points.
Rise are calculated at 10% and 90% points.
0
0
t Fall
2
2
25
t Fall t Rise
4
4
Asynchronous Interface Bus Operation
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TC
TC
0
1Gb x8, x16: NAND Flash Memory
0
t Rise
2
2
4
4
© 2010 Micron Technology, Inc. All rights reserved.
V
V
CC
6
CC
1.8V
6
3.3V