MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 79

• Manufacturer Part Number: MT29F1G08ABADAH4:D
• Description: MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAH4:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 24: AC Characteristics: Normal Operation (1.8V) (Continued)
Note 1 applies to all
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Parameter
RE# HIGH to output High-Z
RE# LOW to output hold
RE# pulse width
Ready to RE# LOW
Reset time (READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
Notes:
1. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
3. The first time the RESET (FFh) command is issued while the device is idle, the device will
sampled and not 100% tested.
be busy for a maximum of 1ms. Thereafter, the device is busy for a maximum of 5µs.
Electrical Specifications – AC Characteristics and Operating
Symbol
t
t
RLOH
t
WHR
t
t
RHZ
t
t
RST
WB
RP
RR
79
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
12
20
80
1Gb x8, x16: NAND Flash Memory
3
–
–
–
5/10/500
Max
100
65
–
–
–
–
© 2010 Micron Technology, Inc. All rights reserved.
Unit
ns
ns
ns
ns
µs
ns
ns
Conditions
Notes
2
3