MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 76
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
ROHM
Quantity:
1 001
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
MICRON
Quantity:
2 690
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Notes:
Note:
Table 19: Capacitance
Table 20: Test Conditions
Description
Input capacitance
Input/output capacitance (I/O)
Parameter
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
1. These parameters are verified in device characterization and are not 100% tested.
2. Test conditions: T
1. These parameters are verified in device characterization and are not 100% tested.
C
= 25°C; f = 1 MHz; V
76
3.3V
1.8V
Symbol
C
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
IO
IN
1Gb x8, x16: NAND Flash Memory
IN
= 0V.
1 TTL GATE and CL = 30pF
1 TTL GATE and CL = 30pF
Max
10
10
Electrical Specifications
0.0V to V
Value
V
5ns
CC
/2
© 2010 Micron Technology, Inc. All rights reserved.
CC
Unit
pF
pF
Notes
1, 2
1, 2
Notes
1
1