MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 28
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
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Part Number
Manufacturer
Quantity
Price
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MT29F1G08ABADAH4:D
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ROHM
Quantity:
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Quantity:
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Device Initialization
Figure 22: R/B# Power-On Behavior
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
V
R/B#
CC
V
CC
V
CC
Micron NAND Flash devices are designed to prevent data corruption during power tran-
sitions. V
protection during power transitions.) When ramping V
to initialize the device:
starts
= V
ramp
1. Ramp V
2. The host must wait for R/B# to be valid and HIGH before issuing RESET (FFh) to
3. If not monitoring R/B#, the host must wait at least 100µs after V
4. The asynchronous interface is active by default for each target. Each LUN draws
5. The RESET (FFh) command must be the first command issued to all targets (CE#s)
6. The device is now initialized and ready for normal operation.
CC
(MIN)
any target. The R/B# signal becomes valid when 50µs has elapsed since the begin-
ning the V
(MIN). If monitoring R/B#, the host must wait until R/B# is HIGH.
less than an average of 10mA (I
(FFh) command is issued.
after the NAND Flash device is powered on. Each target will be busy for 1ms after a
RESET command is issued. The RESET busy time can be monitored by polling R/
B# or issuing the READ STATUS (70h) command to poll the status register.
50µs (MIN)
CC
is internally monitored. (The WP# signal supports additional hardware
(MAX)
CC
10µs
.
CC
ramp, and 10µs has elapsed since V
28
100µs (MAX)
ST
) measured over intervals of 1ms until the RESET
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
CC
CC
reaches V
, use the following procedure
Device Initialization
© 2010 Micron Technology, Inc. All rights reserved.
CC
(MIN).
CC
Reset (FFh)
Invalid
is issued
reaches V
CC