Z0840004PSC Zilog, Z0840004PSC Datasheet - Page 91

• Manufacturer Part Number: Z0840004PSC
• Description: IC 4MHZ Z80 NMOS CPU 40-DIP
• Manufacturer: Zilog

Specifications of Z0840004PSC

• Processor Type: Z80
• Features: NMOS
• Speed: 4MHz
• Voltage: 5V
• Mounting Type: Through Hole
• Package / Case: 40-DIP (0.620", 15.75mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ZiLOG
ZAC03-0004
TERM
BPSG:
CD:
CFA:
C of C:
CMOS:
Confidence:
Check:
Chip:
Clean Room:
Contact:
Control limit:
C-SAM:
CVD:
DC:
DESC:
DI:
DIP:
DRC:
DUT:
Depletion transistor:
DEFINITION
Boron doped Phosphosilicate Glass.
Critical Dimension.
Customer Failure Analysis/Correlation Request.
Certificate of Conformance.
Complementary MOS technology combining n and p transistors in
the same product. Advantages include low power dissipation.
A specialized statistical term which refers to the probability of a
statement being true.
A visual check done at the conclusion of a (dry or wet) masking
step.
One square on a wafer containing a single integrated circuit. The
substrate on which all active and passive components of a circuit
are fabricated; also called a die.
The room in a chip fabrication plant in which wafers are processed.
This area features a controlled environment with filtered air that
eliminates essentially all dust and dirt.
A connection between two conductive layers, e.g., metal-to-silicon
contact.
A statistically defined limit which determines whether or not a
process has changed significantly as compared to past history. A
measure of statistical process control.
C-Mode Scanning Acoustic Microscope which examines packaged
units and produces high resolution, ultrasonic images.
Chemical Vapor Deposition of thin films. Gaseous reactants are
brought together over the silicon wafer, depositing required layers
typically used for interlayer dielectrics and passivation films.
Document Control.
Defense Electronic Supply Center.
Deionized water.
Dual-in-Line Package.
Design Rule Check.
Device Under Test.
A MOSFET with a permanently “on” channel; requires a negative
applied gate voltage to turn off (see “enhancement transistor”).
2002 Quality and Reliability Report
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