Z0840004PSC Zilog, Z0840004PSC Datasheet - Page 94

• Manufacturer Part Number: Z0840004PSC
• Description: IC 4MHZ Z80 NMOS CPU 40-DIP
• Manufacturer: Zilog

Specifications of Z0840004PSC

• Processor Type: Z80
• Features: NMOS
• Speed: 4MHz
• Voltage: 5V
• Mounting Type: Through Hole
• Package / Case: 40-DIP (0.620", 15.75mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ZiLOG
ZAC03-0004
TERM
LPCVD:
LTO glass:
LTPD:
Mask:
Masking:
MeV:
meV:
MFG:
Mil:
MIL:
Mod:
MOS:
MRB:
MTBF:
MTTF:
Nano:
Negative photoresist:
NIST:
Nitride:
NMOS:
Nm:
Ns:
OEM:
OTP:
“Oxi”:
DEFINITION
Low Pressure Chemical Vapor Deposition. Typical method for
deposition of glass used for interlayer or passivation dielectric.
Low Temperature Oxide glass used for interlayer or passivation
dielectric. Typically deposited at the same temperature as APCVD
deposited glasses used for passivation, but at low pressure.
Lot Tolerance Percent Defective. A sample plan that will reject 90
percent of the lots equal to or worse than the stated LTPD value.
A pattern usually “printed” on glass, used to define areas of the
chip on the wafer for production purposes.
The lithography portion of the process or physical area where
lithography occurs.
Million electron Volts.
Milli electron Volts.
Manufacturing.
0.001 inch.
Military.
Nampa Fabrication Module.
Metal Oxide Semiconductor integrated circuit technology.
Material Review Board.
Mean Time Between Failures.
Mean Time to Fail. Time to 50 percent Cumulative Fail.
10
A resist material in which unexposed areas are developed away.
National Institute of Standards and Technology.
Silicon Nitride, Si
N channel MOS technology.
Nanometer (1nm = 10A = 10
Nanoseconds (10
Original Equipment Manufacturer.
One Time Programmable Product sold in plastic packaging. No
window is provided for UV erasure.
A process whereby thick oxide islands are grown between active
device regions for better isolation and performance.
–9
.
–9
3
N
seconds).
4
.
–9
meters).
2002 Quality and Reliability Report
11- 5