M471B5773DH0-YK0 Samsung Semiconductor, M471B5773DH0-YK0 Datasheet - Page 10

• Manufacturer Part Number: M471B5773DH0-YK0
• Manufacturer: Samsung Semiconductor

Specifications of M471B5773DH0-YK0

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Unbuffered SODIMM
8. Absolute Maximum Ratings
8.1 Absolute Maximum DC Ratings
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
3. V
8.2 DRAM Component Operating Temperature Range
NOTE :
1. Operating Temperature T
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main-
3. Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaranteed in this range, but the
9. AC & DC Operating Conditions
9.1 Recommended DC Operating Conditions (SSTL-15)
NOTE:
1. Under all conditions V
2. V
3. V
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us. It is also possible to specify a component with 1X refresh (tREFI
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature
equal to or less than 300mV.
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
JESD51-2.
tained between 0-85°C under all operating conditions
following additional conditions apply:
DD
DDQ
DD
V
Range capability (MR2 A6 = 0b and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.
to 7.8us) in the Extended Temperature Range.
Symbol
IN,
V
Symbol
T
& V
and V
V
V
Symbol
DDQ
STG
V
tracks with V
V
T
DD
DDQ
DD
OPER
OUT
DDQ
DDQ
rating are determinied by operation voltage.
must be within 300mV of each other at all times;and V
DD
Supply Voltage
Supply Voltage for Output
. AC parameters are measured with V
DDQ
Voltage on V
Voltage on V
Voltage on any pin relative to V
OPER
must be less than or equal to V
Parameter
Storage Temperature
is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document
Parameter
DDQ
DD
pin relative to V
pin relative to V
Operating Temperature Range
Operation Voltage
Parameter
DD
DD
SS
SS
SS
.
1.35V
1.35V
1.5V
1.5V
and V
datasheet
DDQ
REF
tied together.
must be not greater than 0.6 x V
- 11 -
1.283
1.425
1.283
1.425
Min.
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-55 to +100
Rating
Rating
DDQ
Typ.
1.35
1.35
1.5
1.5
0 to 95
rating
, When V
DD
and V
1.575
1.575
Max.
DDQ
1.45
1.45
DDR3L SDRAM
are less than 500mV; V
Unit
°C
Units
Units
°C
V
V
V
V
V
V
V
NOTE
1, 2, 3
Rev. 1.0
REF
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
NOTE
NOTE
1, 2
1,3
1,3
1
may be