M471B5773DH0-YK0 Samsung Semiconductor, M471B5773DH0-YK0 Datasheet - Page 4

• Manufacturer Part Number: M471B5773DH0-YK0
• Manufacturer: Samsung Semiconductor

Specifications of M471B5773DH0-YK0

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Unbuffered SODIMM
1. DDR3L Unbuffered SODIMM Ordering Information
NOTE :
1. "##" - F8/H9/K0
2. F8 - 1066Mbps 7-7-7 / H9 - 1333Mbps 9-9-9 / K0 - 1600Mbps 11-11-11
2. Key Features
3. Address Configuration
• JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Power Supply
• V
• 400 MHz f
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10,11
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) and 8 (DDR3-1600)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then T
• Asynchronous Reset
- DDR3-1600(11-11-11) is backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)
CAS Latency
tRCD(min)
tRAS(min)
write [either On the fly using A12 or MRS]
tCK(min)
tRP(min)
tRC(min)
DDQ
Speed
M471B5773DH0-YF8/H9/K0
M471B5273DH0-YF8/H9/K0
256Mx8(2Gb) based Module
= 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
Part Number
CK
Organization
for 800Mb/sec/pin, 533MHz f
2
DDR3-800
6-6-6
37.5
52.5
2.5
15
15
6
Density
CK
2GB
4GB
Row Address
for 1066Mb/sec/pin, 667MHz f
CASE
A0-A14
85°C, 3.9us at 85°C < T
DDR3-1066
datasheet
13.125
13.125
50.625
1.875
7-7-7
37.5
Organization
7
256Mx64
512Mx64
Column Address
- 4 -
CASE
CK
A0-A9
256Mx8(K4B2G0846D-HY##)*16
for 1333Mb/sec/pin, 800MHz f
256Mx8(K4B2G0846D-HY##)*8
DDR3-1333
≤ 95°C
Component Composition
9-9-9
13.5
13.5
49.5
1.5
36
9
Bank Address
BA0-BA2
CK
DDR3-1600
11-11-11
for 1600Mb/sec/pin
13.75
13.75
48.75
1.25
11
35
DDR3L SDRAM
Number of
Rank
Auto Precharge
1
2
A10/AP
Unit
nCK
Rev. 1.0
Height
ns
ns
ns
ns
ns
30mm
30mm