IPG20N04S4-09 Infineon Technologies, IPG20N04S4-09 Datasheet
![MOSFET Power N-Channel 40V MOSFET](/photos/16/8/160865/tdson8_sml.jpg)
IPG20N04S4-09
Manufacturer Part Number
IPG20N04S4-09
Description
MOSFET Power N-Channel 40V MOSFET
Manufacturer
Infineon Technologies
Specifications of IPG20N04S4-09
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
8.6 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
20 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TDSON-8
Lead Free Status / Rohs Status
Details
Other names
IPG20N04S409XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPG20N04S4-09
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
one channel active
Pulsed drain current
one channel active
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
one channel active
Operating and storage temperature
Type
IPG20N04S4-09
2)
Package
PG-TDSON-8-4
j
=25 °C, unless otherwise specified
2, 4)
4)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4N0409
stg
T
T
V
-
I
-
-
T
-
D
C
C
C
GS
=10A
page 1
=25 °C, V
=100 °C,
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
1)
4)
-55 ... +175
Value
145
±20
20
20
80
15
54
PG-TDSON-8-4
IPG20N04S4-09
8.6
40
20
2010-10-08
Unit
A
mJ
A
V
W
°C
V
mW
A