IPG20N04S4-09 Infineon Technologies, IPG20N04S4-09 Datasheet - Page 4
![MOSFET Power N-Channel 40V MOSFET](/photos/16/8/160865/tdson8_sml.jpg)
IPG20N04S4-09
Manufacturer Part Number
IPG20N04S4-09
Description
MOSFET Power N-Channel 40V MOSFET
Manufacturer
Infineon Technologies
Specifications of IPG20N04S4-09
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
8.6 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
20 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TDSON-8
Lead Free Status / Rohs Status
Details
Other names
IPG20N04S409XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPG20N04S4-09
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
= f(T
100
0.1
60
50
40
30
20
10
10
0
1
DS
0.1
0
); T
C
); V
C
p
=25°C; D =0; one channel active
GS
≥ 6 V; one channel active
50
1
T
V
C
DS
100
[°C]
[V]
10
150
100 µs
1 ms
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
25
20
15
10
10
10
= f(t
10
10
5
0
-1
-2
1
0
C
0
10
); V
p
-6
0.05
)
0.01
0.1
0.5
GS
single pulse
10
≥ 6 V; one channel active
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPG20N04S4-09
10
-2
150
10
2010-10-08
-1
200
10
0