IPG20N04S4-09 Infineon Technologies, IPG20N04S4-09 Datasheet - Page 9

• Manufacturer Part Number: IPG20N04S4-09
• Description: MOSFET Power N-Channel 40V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N04S4-09

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 8.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 54 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N04S409XT

Rev. 1.0
Revision History
Version
Revision 1.0
Date
08.10.2010
page 9
Changes
Data Sheet revision 1.0
IPG20N04S4-09
2010-10-08