IPG20N04S4-09 Infineon Technologies, IPG20N04S4-09 Datasheet - Page 9
![MOSFET Power N-Channel 40V MOSFET](/photos/16/8/160865/tdson8_sml.jpg)
IPG20N04S4-09
Manufacturer Part Number
IPG20N04S4-09
Description
MOSFET Power N-Channel 40V MOSFET
Manufacturer
Infineon Technologies
Specifications of IPG20N04S4-09
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
8.6 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
20 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TDSON-8
Lead Free Status / Rohs Status
Details
Other names
IPG20N04S409XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPG20N04S4-09
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
Revision History
Version
Revision 1.0
Date
08.10.2010
page 9
Changes
Data Sheet revision 1.0
IPG20N04S4-09
2010-10-08