ISL9N315AD3 Fairchild Semiconductor, ISL9N315AD3 Datasheet - Page 10

• Manufacturer Part Number: ISL9N315AD3
• Description: MOSFET Power N-Ch LL UltraFET PWM Optimized
• Manufacturer: Fairchild Semiconductor

Specifications of ISL9N315AD3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-251
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2003 Fairchild Semiconductor Corporation
SPICE Thermal Model
REV October 2002
ISL9N315AD3T
CTHERM1 th 6 1.3e-3
CTHERM2 6 5 1.5e-3
CTHERM3 5 4 1.6e-3
CTHERM4 4 3 1.7e-3
CTHERM5 3 2 5.8e-3
CTHERM6 2 tl 4.0e-2
RTHERM1 th 6 2.7e-3
RTHERM2 6 5 3.7e-3
RTHERM3 5 4 5.3e-2
RTHERM4 4 3 6.3e-1
RTHERM5 3 2 7.4e-1
RTHERM6 2 tl 7.6e-1
SABER Thermal Model
SABER thermal model ISL9N315AD3T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.3e-3
ctherm.ctherm2 6 5 = 1.5e-3
ctherm.ctherm3 5 4 = 1.6e-3
ctherm.ctherm4 4 3 = 1.7e-3
ctherm.ctherm5 3 2 = 5.8e-3
ctherm.ctherm6 2 tl = 4.0e-2
rtherm.rtherm1 th 6 = 2.7e-3
rtherm.rtherm2 6 5 = 3.7e-3
rtherm.rtherm3 5 4 = 5.3e-2
rtherm.rtherm4 4 3 = 6.3e-1
rtherm.rtherm5 3 2 = 7.4e-1
rtherm.rtherm6 2 tl = 7.6e-1
}
RTHERM5
RTHERM2
RTHERM6
RTHERM1
RTHERM3
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
ISL9N315AD3/ISL9N315AD3ST Rev.A1
CTHERM5
CTHERM1
CTHERM2
CTHERM3
CTHERM6
CTHERM4