ISL9N315AD3 Fairchild Semiconductor, ISL9N315AD3 Datasheet - Page 9

• Manufacturer Part Number: ISL9N315AD3
• Description: MOSFET Power N-Ch LL UltraFET PWM Optimized
• Manufacturer: Fairchild Semiconductor

Specifications of ISL9N315AD3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-251
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2003 Fairchild Semiconductor Corporation
SABER Electrical Model
REV October 2002
template ISL9N315AD3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 3.5e-11, nl=1.12, rs = 6.4e-3, trs1 = 1e-3, trs2 = 2e-6, xti=2.3, cjo = 6.1e-10, tt = 1e-8, m = 0.62)
dp..model dbreakmod = (rs = 6e-1, trs1 = 1e-3, trs2 = -8.5e-6)
dp..model dplcapmod = (cjo = 3.4e-10, isl=10e-30, nl=10, m=0.45)
m..model mmedmod = (type=_n, vto = 1.68, kp=3.5, is=1e-30, tox=1)
m..model mstrongmod = (type=_n, vto = 2.00, kp = 35, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.36, kp = 0.05, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -4.0, voff = -1.5)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -1.5, voff = -4.0)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.5, voff = 0.3)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.3, voff = -0.5)
c.ca n12 n8 = 5.0e-10
c.cb n15 n14 = 3.9e-10
c.cin n6 n8 = 7.8e-10
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.00e-9
l.lgate n1 n9 = 4.53e-9
l.lsource n3 n7 = 5.38e-10
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1e-3, tc2 = -1e-7
res.rdrain n50 n16 = 1.2e-3, tc1 = 3.4e-2, tc2 = 6e-5
res.rgate n9 n20 = 2.8
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 45.3
res.rlsource n3 n7 = 5.4
res.rslc1 n5 n51= 1e-6, tc1 = 1e-3, tc2 =1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1e-2, tc1 = 1e-3, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -2e-3, tc2 = 1e-6
res.rvthres n22 n8 = 1, tc1 = -1.9e-3, tc2 = -8e-6
spe.ebreak n11 n7 n17 n18 = 31.0
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/120))** 3.5))
}
}
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
RSLC2
6
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
5
MSTRO
14
51
21
RDRAIN
RSLC1
50
ISCL
16
8
MMED
8
RSOURCE
DBREAK
IT
MWEAK
17
EBREAK
RVTHRES
RBREAK
11
+
-
ISL9N315AD3/ISL9N315AD3ST Rev.A1
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
RLDRAIN
LSOURCE
VBAT
LDRAIN
DBODY
SOURCE
DRAIN
2
3