FDMS86500L Fairchild Semiconductor, FDMS86500L Datasheet - Page 2

• Manufacturer Part Number: FDMS86500L
• Description: MOSFET Power 60V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86500L

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 mOhms
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 25 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS86500L Rev.C1
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
4. Package-limited current of 80 A is based on ideal infinite heatsink condition.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
rr
DS(on)
the user's board design.
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
rr
Symbol
AS
θJA
DSS
GS(th)
DSS
J
J
of tbd mJ is based on starting T
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
°
C, L = 0.3 mH, I
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
AS
a) 50 °C/W when mounted on a
= 40 A, V
1 in
2
pad of 2 oz copper
DD
V
I
V
V
V
V
V
V
I
I
V
V
f = 1 MHz
= 54 V, V
I
I
V
D
V
V
V
V
F
F
D
D
GS
GS
GS
GS
DS
GS
GS
DS
GS
DS
DD
GS
GS
GS
= 250 μA, referenced to 25 °C
= 25 A, di/dt = 100 A/μs
= 25 A, di/dt = 300 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 0 V, I
= 0 V, I
= 30 V, V
= 48 V, V
= ±20 V, V
= 30 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
GS
2
DS
Test Conditions
= 10 V.
, I
D
S
S
D
D
D
= 20 A
D
D
= 2.1 A
= 25 A
GS
= 250 μA
GS
GEN
GS
= 25 A
= 25 A, T
= 25 A,
= 20 A
DS
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 25 A
J
= 30 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
Min
60
1
b) 125 °C/W when mounted on a
9420
1470
minimum pad of 2 oz copper.
0.68
0.79
26.6
11.5
117
Typ
1.1
1.8
2.1
2.9
3.1
7.8
50
54
42
46
84
95
27
16
63
54
-7
30
12530
1955
±100
Max
100
165
108
134
θCA
2.5
3.7
3.7
1.2
1.3
67
80
43
28
16
87
73
www.fairchildsemi.com
3
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
Ω
V
S
V
V