FDMS86500L Fairchild Semiconductor, FDMS86500L Datasheet - Page 3

• Manufacturer Part Number: FDMS86500L
• Description: MOSFET Power 60V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86500L

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 mOhms
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 25 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS86500L Rev.C1
Typical Characteristics
180
150
120
180
150
120
1.8
1.6
1.4
1.2
1.0
0.8
0.6
90
60
30
90
60
30
Figure 3. Normalized On- Resistance
Figure 1.
0
0
0.0
-75
Figure 5. Transfer Characteristics
1
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
GS
-50
= 25 A
vs Junction Temperature
= 5 V
= 10 V
V
DS
0.5
T
V
-25
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
J
GS
,
2
V
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
T
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
V
V
= 150
GS
= 4 V
0
GS
1.0
= 4.5 V
= 10 V
o
25
C
μ
s
3
50
T
T
J
1.5
J
= 25 °C unless otherwise noted
T
= -55
J
75
= 25
μ
s
o
C
o
4
o
100 125 150
C
C )
2.0
V
GS
V
GS
= 3.5 V
= 3 V
2.5
5
3
0.001
1000
0.01
100
0.1
10
10
5
4
3
2
1
0
Figure 2.
Figure 4.
8
6
4
2
0
1
Forward Voltage vs Source Current
0
0.0
2
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
V
= 0 V
SD
GS
30
0.2
T
, BODY DIODE FORWARD VOLTAGE (V)
J
Normalized On-Resistance
V
= 3 V
On-Resistance vs Gate to
= 150
GS
I
Source Voltage
D
4
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
J
60
o
0.4
I
= 125
C
D
= 25 A
o
C
μ
s
90
0.6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
V
J
GS
= 25
T
V
= 4.5 V
J
120
0.8
GS
= -55
o
C
T
= 3.5 V
J
= 25
8
o
C
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V
150
1.0
V
o
GS
GS
C
= 10 V
= 4 V
μ
s
180
1.2
10