FDMS86500L Fairchild Semiconductor, FDMS86500L Datasheet - Page 4

• Manufacturer Part Number: FDMS86500L
• Description: MOSFET Power 60V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86500L

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 mOhms
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 25 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS86500L Rev.C1
Typical Characteristics
0.01
100
200
100
0.1
10
10
10
Figure 7.
8
6
4
2
0
1
0.01
1
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
I
D
Figure 11.
J
A
θ
JA
= 25 A
= MAX RATED
= 25
= 125
20
Switching Capability
o
V
0.1
C
Gate Charge Characteristics
DS
0.1
t
o
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
C/W
Unclamped Inductive
DS(on)
, TIME IN AVALANCHE (ms)
Q
g
T
40
Forward Bias Safe
, GATE CHARGE (nC)
J
= 125
V
1
DD
T
J
1
o
= 30 V
= 25
C
60
T
J
o
T
V
= 100
C
V
DD
10
J
DD
= 25 °C unless otherwise noted
= 40 V
= 20 V
80
10
o
C
100
100
1 ms
1 s
DC
10 ms
100 ms
10 s
100 300
1000
120
4
50000
10000
1000
1000
160
120
100
100
80
40
Figure 10.
0.5
10
10
0
1
10
0.1
25
Figure 12. Single Pulse Maximum
-3
Figure 8.
Limited by Package
f = 1 MHz
V
Current vs Case Temperature
GS
V
= 0 V
GS
10
= 4.5 V
V
50
-2
Maximum Continuous Drain
Power Dissipation
DS
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
C
Capacitance vs Drain
R
,
θ
t, PULSE WIDTH (sec)
CASE TEMPERATURE (
10
JC
V
= 1.2
-1
1
GS
75
= 10 V
o
C/W
1
100
10
SINGLE PULSE
R
T
10
A
θ
o
JA
C )
= 25
C
C
C
= 125
125
oss
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100
o
C
o
C/W
1000
150
60