PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet
PHKD13N03LT,118
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PHKD13N03LT,118 Summary of contents
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PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 03 — 27 April 2010 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain 3. Ordering information Table 3. Ordering information Type number Package Name PHKD13N03LT SO8 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) ...
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... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of solder point temperature Limit R DSon ( Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHKD13N03LT Product data sheet 03aa25 P der (%) 150 200 T (°C) sp Fig All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-sp) junction to solder point R thermal resistance from th(j-a) junction to ambient th(j-sp) (K/W) δ = 0.5 10 0.2 0.1 0.05 0.02 1 single pulse - Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...
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... NXP Semiconductors 10 VGS ( ( 0.2 0.4 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) −2 10 −3 10 min typ −4 10 −5 10 − Fig 7. Sub-threshold drain current as a function of gate-source voltage PHKD13N03LT Product data sheet 003aaa325 2.8 V 2.7 V 2 ...
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... NXP Semiconductors 80 2 DSon (mΩ ( Fig 9. Drain-source on-state resistance as a function of drain current; typical values ( Fig 11. Gate-source voltage as a function of gate charge; typical values PHKD13N03LT Product data sheet 003aaa327 2 (A) D Fig 10. Normalized drain-source on-state resistance 003aaa330 (pF (nC) G Fig 12. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 03 — ...
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... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHKD13N03LT Product data sheet ( 150 °C 0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 27 April 2010 PHKD13N03LT Dual N-channel TrenchMOS logic level FET 003aaa329 = 25 °C ...
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... NXP Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PHKD13N03LT_3 20100427 • Modifications: Various changes to content. PHKD13N03LT_2 20090306 PHKD13N03LT-01 20030623 (9397 750 11612) PHKD13N03LT Product data sheet Dual N-channel TrenchMOS logic level FET Data sheet status Product data sheet Product data sheet Product data All information provided in this document is subject to legal disclaimers ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...