PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 9

• Manufacturer Part Number: PHKD13N03LT,118
• Description: MOSFET N-CH TRENCH DL 30V 8SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHKD13N03LT,118

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 752pF @ 15V
• Power - Max: 3.57W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Package outline
Fig 14. Package outline SOT96-1 (SO8)
PHKD13N03LT
Product data sheet
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
VERSION
OUTLINE
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
A
y
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
All information provided in this document is subject to legal disclaimers.
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
p
0.20
0.19
D
5.0
4.8
5
4
0
(1)
Rev. 03 — 27 April 2010
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
Dual N-channel TrenchMOS logic level FET
5 mm
L
H
0.039
0.016
E
E
1.0
0.4
detail X
L
p
L
0.028
0.024
L
0.7
0.6
Q
p
Q
PROJECTION
PHKD13N03LT
(A )
EUROPEAN
0.25
0.01
3
A
v
θ
0.25
0.01
A
w
X
v
M
0.004
0.1
A
© NXP B.V. 2010. All rights reserved.
y
ISSUE DATE
99-12-27
03-02-18
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
θ
o
o
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