PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 8

• Manufacturer Part Number: PHKD13N03LT,118
• Description: MOSFET N-CH TRENCH DL 30V 8SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHKD13N03LT,118

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 752pF @ 15V
• Power - Max: 3.57W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
PHKD13N03LT
Product data sheet
Fig 13. Source current as a function of source-drain voltage; typical values
(A)
I
S
5
4
3
2
1
0
0.2
All information provided in this document is subject to legal disclaimers.
150 °C
0.4
Rev. 03 — 27 April 2010
0.6
T
0.8
j
= 25 °C
Dual N-channel TrenchMOS logic level FET
V
003aaa329
SD
(V)
1
PHKD13N03LT
© NXP B.V. 2010. All rights reserved.
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