PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 8
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PHKD13N03LT,118
Manufacturer Part Number
PHKD13N03LT,118
Description
MOSFET N-CH TRENCH DL 30V 8SOIC
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PHKD13N03LT518.pdf
(13 pages)
Specifications of PHKD13N03LT,118
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.4A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
10.7nC @ 5V
Input Capacitance (ciss) @ Vds
752pF @ 15V
Power - Max
3.57W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NXP Semiconductors
PHKD13N03LT
Product data sheet
Fig 13. Source current as a function of source-drain voltage; typical values
(A)
I
S
5
4
3
2
1
0
0.2
All information provided in this document is subject to legal disclaimers.
150 °C
0.4
Rev. 03 — 27 April 2010
0.6
T
0.8
j
= 25 °C
Dual N-channel TrenchMOS logic level FET
V
003aaa329
SD
(V)
1
PHKD13N03LT
© NXP B.V. 2010. All rights reserved.
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