PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 7

• Manufacturer Part Number: PHKD13N03LT,118
• Description: MOSFET N-CH TRENCH DL 30V 8SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHKD13N03LT,118

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 752pF @ 15V
• Power - Max: 3.57W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
PHKD13N03LT
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
80
60
40
20
0
5
4
3
2
1
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
V
GS
(V) =
2
2.5 V
5
2.6 V
4
6
10
Q
All information provided in this document is subject to legal disclaimers.
8
G
2.8 V
10 V
3 V
4 V
003aaa327
003aaa330
(nC)
I
D
(A)
5 V
10
15
Rev. 03 — 27 April 2010
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
10
1.5
0.5
10
2
1
0
4
3
2
10
−60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
Dual N-channel TrenchMOS logic level FET
−1
0
1
PHKD13N03LT
60
10
120
V
© NXP B.V. 2010. All rights reserved.
DS
003aaa328
T
j
(V)
C
C
C
( ° C)
03aa27
iss
oss
rss
180
102
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