PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 3
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PHKD13N03LT,118
Manufacturer Part Number
PHKD13N03LT,118
Description
MOSFET N-CH TRENCH DL 30V 8SOIC
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PHKD13N03LT518.pdf
(13 pages)
Specifications of PHKD13N03LT,118
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.4A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
10.7nC @ 5V
Input Capacitance (ciss) @ Vds
752pF @ 15V
Power - Max
3.57W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NXP Semiconductors
PHKD13N03LT
Product data sheet
Fig 1.
Fig 3.
(A)
I
(%)
I
der
D
10
10
120
80
40
10
-1
2
1
0
10
function of solder point temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
Limit R
100
DSon
= V
DS
150
/ I
D
All information provided in this document is subject to legal disclaimers.
T
sp
1
03aa25
(°C)
200
Rev. 03 — 27 April 2010
DC
Fig 2.
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
Dual N-channel TrenchMOS logic level FET
10
50
PHKD13N03LT
100
10 ms
100 ms
1 ms
t
p
= 10 μ s
V
150
DS
© NXP B.V. 2010. All rights reserved.
(V)
T
003aaa368
sp
03aa17
(°C)
10
200
2
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