PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 3

• Manufacturer Part Number: PHKD13N03LT,118
• Description: MOSFET N-CH TRENCH DL 30V 8SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHKD13N03LT,118

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 752pF @ 15V
• Power - Max: 3.57W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
PHKD13N03LT
Product data sheet
Fig 1.
Fig 3.
(A)
I
(%)
I
der
D
10
10
120
80
40
10
-1
2
1
0
10
function of solder point temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
Limit R
100
DSon
= V
DS
150
/ I
D
All information provided in this document is subject to legal disclaimers.
T
sp
1
03aa25
(°C)
200
Rev. 03 — 27 April 2010
DC
Fig 2.
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
Dual N-channel TrenchMOS logic level FET
10
50
PHKD13N03LT
100
10 ms
100 ms
1 ms
t
p
= 10 μ s
V
150
DS
© NXP B.V. 2010. All rights reserved.
(V)
T
003aaa368
sp
03aa17
(°C)
10
200
2
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