PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 2

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PHKD13N03LT,118

Manufacturer Part Number
PHKD13N03LT,118
Description
MOSFET N-CH TRENCH DL 30V 8SOIC
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PHKD13N03LT,118

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.4A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
10.7nC @ 5V
Input Capacitance (ciss) @ Vds
752pF @ 15V
Power - Max
3.57W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PHKD13N03LT
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PHKD13N03LT
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Single device conducting.
Symbol Description
S1
G1
S2
G2
D2
D2
D1
D1
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
source1
gate1
source2
gate2
drain2
drain2
drain1
drain
Package
Name
SO8
Description
plastic small outline package; 8 leads; body width 3.9 mm
Conditions
T
T
T
T
see
T
see
T
T
T
All information provided in this document is subject to legal disclaimers.
j
j
sp
sp
sp
sp
sp
sp
≥ 25 °C; T
≥ 25 °C; T
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C; t
Figure 3
Figure 3
Rev. 03 — 27 April 2010
Simplified outline
j
j
p
p
≤ 150 °C
≤ 150 °C; R
GS
≤ 10 µs; pulsed;
≤ 10 µs; pulsed
GS
Figure 2
SOT96-1 (SO8)
= 10 V; see
= 10 V; see
8
1
GS
= 20 kΩ
Figure
Figure 1
5
4
Dual N-channel TrenchMOS logic level FET
1;
Graphic symbol
[1]
[1]
[1]
[1]
[1]
PHKD13N03LT
Min
-
-
-20
-
-
-
-
-55
-55
-
-
D1
S1
D1
Typ
-
-
-
-
-
-
-
-
-
-
-
G1
© NXP B.V. 2010. All rights reserved.
D2
S2
150
Version
SOT96-1
Max
30
30
20
6.6
10.4
42
3.57
150
3.2
42
D2
mbk725
G2
Unit
V
V
V
A
A
A
W
°C
°C
A
A
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