PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 5

• Manufacturer Part Number: PHKD13N03LT,118
• Description: MOSFET N-CH TRENCH DL 30V 8SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHKD13N03LT,118

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 752pF @ 15V
• Power - Max: 3.57W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
Table 6.
PHKD13N03LT
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
V
see
I
see
V
see
V
R
I
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
S
S
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 7 A; V
= 7 A; dI
= 250 µA; V
= 250 µA; V
= 250 µA; V
= 250 µA; V
= 250 µA; V
= 5 A; V
Figure 8
Figure 8
Figure 8
Figure
Figure 10
Figure 11
Figure 12
= 24 V; V
= 24 V; V
= 15 V; V
= 15 V; R
= 30 V; T
= 20 V; V
= -20 V; V
= 10 V; I
= 4.5 V; I
= 10 V; I
= 6 Ω; T
Rev. 03 — 27 April 2010
GS
DS
S
9; see
/dt = -100 A/µs; V
D
D
D
= 15 V; V
= 0 V; T
j
GS
GS
GS
DS
L
GS
GS
DS
DS
DS
DS
= 8 A; T
= 25 °C
= 8 A; T
j
= 7 A; T
= 10 Ω; V
= 25 °C; I
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz; T
= V
= V
= V
= 0 V; T
= 0 V; T
= 0 V; T
Figure 10
GS
GS
GS
j
= 25 °C; see
j
j
GS
; T
; T
; T
j
= 25 °C; see
= 150 °C;
= 25 °C; see
j
j
j
GS
j
j
j
D
= 25 °C
= 100 °C
= 25 °C
j
j
j
= 5 V; T
= -55 °C
= 25 °C
= 25 °C
= -55 °C;
= 150 °C;
= 25 °C;
= 1.5 A
= 10 V;
GS
Dual N-channel TrenchMOS logic level FET
= 0 V;
j
= 25 °C;
Figure 13
j
Figure
= 25 °C;
Figure 9
9;
PHKD13N03LT
Min
27
30
-
0.5
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
1.5
-
-
-
-
-
21
17
10.7
2.7
3.9
752
200
130
6
7
23
11
0.86
25
5
© NXP B.V. 2010. All rights reserved.
Max
-
-
2.2
-
2
1
5
100
100
34
26
20
-
-
-
-
-
-
-
-
-
-
1.1
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
5 of 13