BFR193WH6327XT Infineon Technologies, BFR193WH6327XT Datasheet - Page 2

• Manufacturer Part Number: BFR193WH6327XT
• Manufacturer: Infineon Technologies

Specifications of BFR193WH6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 80mA
• Dc Current Gain (min): 70
• Power Dissipation: 580mW
• Frequency (max): 8GHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-323
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
C
C
CE
CB
EB
= 1 mA, I
= 30 mA, V
= 1 V, I
= 20 V, V
= 10 V, I
B
C
E
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
Values
typ.
100
-
-
-
-
max.
100
100
140
BFR193W
1
2007-03-30
-
Unit
V
µA
nA
µA
-