BFR193WH6327XT Infineon Technologies, BFR193WH6327XT Datasheet - Page 3

• Manufacturer Part Number: BFR193WH6327XT
• Manufacturer: Infineon Technologies

Specifications of BFR193WH6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 80mA
• Dc Current Gain (min): 70
• Power Dissipation: 580mW
• Frequency (max): 8GHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-323
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum available
I
Z
I
Z
Transducer gain
I
f = 900 MHz
I
f = 1.8 GHz
1
C
C
C
C
C
C
C
G
L
L
CB
CE
EB
ma
= 50 mA, V
= 10 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= | S
Lopt
Lopt
21
/ S
, f = 900 MHz
, f = 1.8 GHz
12
CE
CE
CE
CE
CE
CE
CE
| (k-(k²-1)
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
1/2 )
BE
BE
S
S
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
= 50
= 50
1)
= 25°C, unless otherwise specified
,
,
,
,
,
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
10.5
13.5
0.74
0.28
typ.
1.8
1.6
16
8
1
8
max.
BFR193W
1
2007-03-30
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB