BFR193WH6327XT Infineon Technologies, BFR193WH6327XT Datasheet - Page 4

• Manufacturer Part Number: BFR193WH6327XT
• Manufacturer: Infineon Technologies

Specifications of BFR193WH6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 80mA
• Dc Current Gain (min): 70
• Power Dissipation: 580mW
• Frequency (max): 8GHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-323
• Lead Free Status / Rohs Status: Compliant

IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
0.2738
24
1.935
3.8742
0.94371
1
1.1824
18.828
0.96893
1.1828
1.0037
0
3
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
125
0.26949
14.267
0.037925
1.8368
0.76534
0.70276
0.69477
0
0.30002
0
0
0.72063
4
-
-
-
A
-
A
-
V
deg
fF
-
L
L
L
L
L
L
C
C
C
Valid up to 6GHz
BI
BO
EI
EO
CI
CO
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
BE
CB
CE
=
=
=
=
=
=
=
=
=
0.95341
10.627
1.4289
0.037409
0.91763
0.11938
0.48654
0.8
935.03
0.053563
0.75
1.11
300
0.57
0.4
0.43
0.5
0
0.41
61
101
175
BFR193W
2007-03-30
-
fA
-
fA
mA
-
V
fF
-
V
eV
K
nH
nH
nH
fF
fF
fF
fF
fF
fF