TDA8932BTW/N2,118 NXP Semiconductors, TDA8932BTW/N2,118 Datasheet - Page 26

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TDA8932BTW/N2,118

Manufacturer Part Number
TDA8932BTW/N2,118
Description
IC AMP AUDIO CLASS D 32HTSSOP
Manufacturer
NXP Semiconductors
Type
Class Dr
Datasheets

Specifications of TDA8932BTW/N2,118

Output Type
1-Channel (Mono) or 2-Channel (Stereo)
Package / Case
32-TSSOP Exposed Pad, 32-eTSSOP, 32-HTSSOP
Max Output Power X Channels @ Load
55W x 1 @ 8 Ohm; 26.5W x 2 @ 4 Ohm
Voltage - Supply
10 V ~ 36 V, ±5 V ~ 18 V
Features
Depop, Differential Inputs, Mute, Short-Circuit and Thermal Protection
Mounting Type
Surface Mount
Product
Class-D
Output Power
55 W
Available Set Gain
36 dB
Common Mode Rejection Ratio (min)
75 dB
Thd Plus Noise
0.007 %
Operating Supply Voltage
22 V
Supply Current
0.145 mA
Maximum Power Dissipation
5000 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Audio Load Resistance
8 Ohms
Dual Supply Voltage
+/- 11 V
Input Signal Type
Differential
Minimum Operating Temperature
- 40 C
Output Signal Type
Differential, Single
Supply Type
Single or Dual
Supply Voltage (max)
36 V
Supply Voltage (min)
10 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
935283479118
NXP Semiconductors
Table 8.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
UJA1079_2
Product data sheet
Symbol
T
amb
A reverse diode connected between V1 (anode) and BAT (cathode) limits the voltage drop voltage from V1(+) to BAT (−).
Verified by an external test house to ensure pins can withstand ISO 7637 part 2 automotive transient test pulses 1, 2a, 3a and 3b.
IEC 61000-4-2 (150 pF, 330 Ω).
ESD performance according to IEC 61000-4-2 (150 pF, 330 Ω) has been verified by an external test house for pins BAT, LIN, WAKE1
and WAKE2. The result is equal to or better than ±6 kV.
Human Body Model (HBM): according to AEC-Q100-002 (100 pF, 1.5 kΩ).
V1 and BAT connected to GND, emulating application circuit.
Machine Model (MM): according to AEC-Q100-003 (200 pF, 0.75 μH, 10 Ω).
Charged Device Model (CDM): according to AEC-Q100-011 (field Induced charge; 4 pF).
In accordance with IEC 60747-1. An alternative definition of virtual junction temperature is: T
fixed value to be used for the calculation of T
temperature (T
Limiting values
Parameter
ambient
temperature
amb
).
…continued
Conditions
All information provided in this document is subject to legal disclaimers.
vj
. The rating for T
Rev. 02 — 27 May 2010
vj
limits the allowable combinations of power dissipation (P) and ambient
vj
= T
amb
LIN core system basis chip
Min
−40
+ P × R
th(vj-a)
UJA1079
© NXP B.V. 2010. All rights reserved.
Max
+125
, where R
th(vj-a)
26 of 45
Unit
°C
is a

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