TDA8932BTW/N2,118 NXP Semiconductors, TDA8932BTW/N2,118 Datasheet - Page 31

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TDA8932BTW/N2,118

Manufacturer Part Number
TDA8932BTW/N2,118
Description
IC AMP AUDIO CLASS D 32HTSSOP
Manufacturer
NXP Semiconductors
Type
Class Dr
Datasheets

Specifications of TDA8932BTW/N2,118

Output Type
1-Channel (Mono) or 2-Channel (Stereo)
Package / Case
32-TSSOP Exposed Pad, 32-eTSSOP, 32-HTSSOP
Max Output Power X Channels @ Load
55W x 1 @ 8 Ohm; 26.5W x 2 @ 4 Ohm
Voltage - Supply
10 V ~ 36 V, ±5 V ~ 18 V
Features
Depop, Differential Inputs, Mute, Short-Circuit and Thermal Protection
Mounting Type
Surface Mount
Product
Class-D
Output Power
55 W
Available Set Gain
36 dB
Common Mode Rejection Ratio (min)
75 dB
Thd Plus Noise
0.007 %
Operating Supply Voltage
22 V
Supply Current
0.145 mA
Maximum Power Dissipation
5000 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Audio Load Resistance
8 Ohms
Dual Supply Voltage
+/- 11 V
Input Signal Type
Differential
Minimum Operating Temperature
- 40 C
Output Signal Type
Differential, Single
Supply Type
Single or Dual
Supply Voltage (max)
36 V
Supply Voltage (min)
10 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
935283479118
NXP Semiconductors
Table 10.
T
positive currents flow in the IC; typical values are given at V
UJA1079_2
Product data sheet
Symbol
Load regulation
ΔV
Line regulation
ΔV
PNP base; pin VEXCTRL
I
I
I
PNP collector; pin VEXCC
V
Serial peripheral interface inputs; pins SDI. SCK and SCSN
V
V
R
R
I
Serial peripheral interface data output; pin SDO
I
I
I
O(sc)
th(act)PNP
th(deact)PNP
LI(SDI)
OH
OL
LO
vj
th(act)Ilim
th(sw)
hys(i)
pd(SCK)
pu(SCSN)
=
V1
V1
40 °C to +150
Static characteristics
Parameter
voltage variation on pin V1
voltage variation on pin V1
short-circuit output current
PNP activation threshold
current
PNP deactivation threshold
current
current limiting activation
threshold voltage
switching threshold voltage
input hysteresis voltage
pull-down resistance on pin
SCK
pull-up resistance on pin
SCSN
input leakage current on pin
SDI
HIGH-level output current
LOW-level output current
output leakage current
°
C; V
BAT
= 4.5 V to 28 V; V
…continued
All information provided in this document is subject to legal disclaimers.
Conditions
as a function of load current variation
V
I
as a function of supply voltage variation
V
V
load current increasing; external PNP
transistor connected - see
load current falling; external PNP
transistor connected - see
measured across resistor connected
between pins VEXCC and V1 (see
Section
2.97 V ≤ V
V
V
V
V
V
V
V
V
BAT
V1
BAT
BAT
VEXCTRL
V1
V1
SCSN
V1
SCSN
V1
SCSN
V1
PDC 0
PDC 0; T
PDC 1
PDC 1; T
PDC 0
PDC 0; T
PDC 1
PDC 1; T
= −250 mA to −5 mA
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
> V
Rev. 02 — 27 May 2010
= 5.75 V to 28 V
= 5.5 V to 28 V; I
= 0 V; V
= 0 V; V
= V
V1
6.6.2)
; R
≥ 4.5 V; V
V1
V1
vj
vj
vj
vj
BAT
; V
LIN
= 150 °C
= 150 °C
= 150 °C
= 150 °C
≤ 5.5 V; 6 V < V
O
O
O
= 500
= 14 V; unless otherwise specified.
= V
= 0.4 V
= 0 V to V
BAT
V1
V1
Ω
− 0.4 V
= 6 V to 28 V
; all voltages are defined with respect to ground;
= −30 mA
Section 6.6.2
Section 6.6.2
V1
BAT
< 28 V
Min
-
-
3.5
74
74
44
44
40
44
12
240
0.3V
100
50
50
−5
−30
1.6
−5
11
LIN core system basis chip
V1
Typ
-
-
5.8
130
85
76
50
76
50
22
15
-
-
-
130
130
-
-
-
-
UJA1079
© NXP B.V. 2010. All rights reserved.
114
120
Max
25
25
8
191
99
59
59
36
18
330
0.7V
900
400
400
+5
−1.6
30
5
V1
31 of 45
Unit
mV
mV
mA
mA
mA
mA
mA
mA
mA
mA
mA
mV
V
mV
μA
mA
mA
μA

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