NX3008PBKS NXP Semiconductors, NX3008PBKS Datasheet - Page 3

• Manufacturer Part Number: NX3008PBKS
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
NX3008PBKS
Product data sheet
Symbol
Per transistor
V
V
I
I
P
Per device
P
T
T
T
Source-drain diode
I
ESD maximum rating
V
D
DM
S
j
amb
stg
DS
GS
tot
tot
ESD
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
T
HBM
Rev. 1 — 1 August 2011
j
amb
amb
sp
amb
amb
GS
GS
= 25 °C
= 25 °C
= -4.5 V; T
= -4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
= 25 °C
amb
amb
= 25 °C
= 100 °C
30 V, 200 mA dual P-channel Trench MOSFET
p
≤ 10 µs
NX3008PBKS
[1]
[1]
[2]
[1]
[2]
[1]
[3]
Min
-
-8
-
-
-
-
-
-
-
-55
-55
-65
-
-
© NXP B.V. 2011. All rights reserved.
2
150
150
150
Max
-30
8
-200
-125
-0.8
280
320
990
445
-200
2000
.
Unit
V
V
mA
mA
A
mW
mW
mW
mW
°C
°C
°C
mA
V
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