NX3008PBKS NXP Semiconductors, NX3008PBKS Datasheet - Page 5

• Manufacturer Part Number: NX3008PBKS
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
NX3008PBKS
Product data sheet
Symbol
Per device
R
Per transistor
R
R
Fig 4.
th(j-a)
th(j-a)
th(j-sp)
Z
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
(K/W)
th(j-a)
10
10
10
1
3
2
10
typical values
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−3
Thermal characteristics
duty cycle = 1
0.25
0.5
0.1
0
Parameter
thermal resistance from junction to
ambient
thermal resistance from junction to
ambient
thermal resistance from junction to
solder point
0.75
0.33
0.05
0.02
0.01
0.2
10
−2
All information provided in this document is subject to legal disclaimers.
10
−1
Rev. 1 — 1 August 2011
Conditions
in free air
in free air
1
30 V, 200 mA dual P-channel Trench MOSFET
10
[1]
[1]
[2]
2
Min
-
-
-
-
.
NX3008PBKS
10
2
Typ
-
390
340
-
t
p
© NXP B.V. 2011. All rights reserved.
(s)
017aaa034
Max
300
445
390
130
10
3
Unit
K/W
K/W
K/W
K/W
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