NX3008PBKS NXP Semiconductors, NX3008PBKS Datasheet - Page 8

• Manufacturer Part Number: NX3008PBKS
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX3008PBKS
Product data sheet
Fig 6.
Fig 8.
R
DS
(Ω)
(A)
-0.25
-0.20
-0.15
-0.10
-0.05
I
0.00
D
(on)
14
12
10
8
6
4
2
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
0
j
j
-4.5 V
= 25 °C
= 25 °C
GS
GS
GS
GS
GS
GS
(1)
-0.05
= -1.75 V
= -2.0 V
= -2.25 V
= -2.5 V
= -3.0 V
= -4.5 V
-1
(2)
-3 V
-0.10
-2
(3)
-0.15
V
GS
-3
-0.20
-2.5 V
-2 V
= -1.5 V
All information provided in this document is subject to legal disclaimers.
(4)
V
001aao256
001aao258
(5)
(6)
DS
I
D
(V)
(A)
-0.25
-4
Rev. 1 — 1 August 2011
Fig 7.
Fig 9.
R
DS
(Ω)
(A)
-10
-10
-10
-10
I
D
(on)
14
12
10
30 V, 200 mA dual P-channel Trench MOSFET
-3
-4
-5
-6
8
6
4
2
0
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
D
j
= 25 °C; V
= -200 mA
j
j
= 150 °C
= 25 °C
-1
-0.5
DS
= -5 V
-2
(1)
NX3008PBKS
-3
(2)
-1.0
(3)
V
© NXP B.V. 2011. All rights reserved.
-4
GS
001aao257
001aao259
V
(1)
(2)
(V)
GS
(A)
-1.5
-5
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