NX3008PBKS NXP Semiconductors, NX3008PBKS Datasheet - Page 7

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

NX3008PBKS

Manufacturer Part Number
NX3008PBKS
Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NX3008PBKS,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
7. Characteristics
Table 7.
NX3008PBKS
Product data sheet
Symbol
Static characteristics (per transistor)
V
V
I
I
R
g
Dynamic characteristics (per transistor)
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode (per transistor)
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
D
D
S
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
DS
DS
G(ext)
= 25 °C
= -200 mA; V
= -250 µA; V
= -250 µA; V
= -30 V; V
= -30 V; V
= -10 V; I
= -15 V; I
= -15 V; f = 1 MHz; V
= -20 V; R
= 8 V; V
= -8 V; V
= 4.5 V; V
= -4.5 V; V
= 2.5 V; V
= -2.5 V; V
= -4.5 V; I
= -4.5 V; I
= -2.5 V; I
= -4.5 V; T
= 6 Ω; T
Rev. 1 — 1 August 2011
DS
DS
D
D
D
D
D
GS
GS
DS
DS
L
j
j
GS
DS
DS
DS
= -200 mA; T
= -200 mA;
= 0 V; T
GS
= 25 °C
= 25 °C
= -200 mA; T
= -200 mA; T
= -10 mA; T
= 250 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
j
; T
j
= 25 °C
= 25 °C
j
j
j
j
GS
j
j
j
= 25 °C
= 25 °C
= 25 °C
= 150 °C
j
j
GS
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
j
30 V, 200 mA dual P-channel Trench MOSFET
j
= 0 V;
= 25 °C
j
j
= 25 °C
= -4.5 V;
= 25 °C
= 150 °C
Min
-30
-0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.47
NX3008PBKS
Typ
-
-0.9
-
-
-0.2
-0.2
-10
-10
-1
-1
2.8
5.3
5.3
160
0.55
0.23
0.09
31
6.5
2.3
19
30
65
38
-0.88
© NXP B.V. 2011. All rights reserved.
-
-
-
Max
-
-1.1
-1
-10
-1
-1
-
-
-
-
4.1
7.8
6.5
-
0.72
-
46
-
38
130
-
-1.2
Unit
V
V
µA
µA
µA
µA
nA
nA
nA
nA
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
7 of 17

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