NX3008PBKS NXP Semiconductors, NX3008PBKS Datasheet - Page 9

• Manufacturer Part Number: NX3008PBKS
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX3008PBKS
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
-0.25
-0.20
-0.15
-0.10
-0.05
I
0.00
D
-1.5
-1.0
-0.5
0.0
-60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= -0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
x R
0
DSon
-1
DS
(1)
(2)
(3)
= V
60
GS
-2
120
(1)
V
All information provided in this document is subject to legal disclaimers.
GS
001aao260
001aao262
T
j
(V)
(˚C)
(2)
180
-3
Rev. 1 — 1 August 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
2.0
1.5
1.0
0.5
0.0
10
30 V, 200 mA dual P-channel Trench MOSFET
1
-10
2
-60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1)C
(2)C
(3)C
-1
iss
oss
rss
0
GS
-1
= 0 V
NX3008PBKS
60
-10
(1)
(2)
(3)
120
V
© NXP B.V. 2011. All rights reserved.
DS
001aao261
T
001aao263
j
(V)
(˚C)
-10
180
2
9 of 17