BLM6G10-30 NXP Semiconductors, BLM6G10-30 Datasheet - Page 3

• Manufacturer Part Number: BLM6G10-30
• Description: 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
4. Block diagram
5. Limiting values
6. Thermal characteristics
BLM6G10-30_BLM6G10-30G
Product data sheet
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Type number
Symbol
V
V
I
I
T
T
Symbol
R
R
BLM6G10-30
BLM6G10-30G
D1
D2
Fig 2.
stg
j
DS
GS
th(j-c)1
th(j-c)2
Thermal resistance is determined under specific RF operating conditions.
Block diagram of BLM6G10-30 and BLM6G10-30G
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
first stage drain current
second stage drain current
storage temperature
junction temperature
Parameter
first stage thermal resistance
from junction to case
second stage thermal resistance
from junction to case
All information provided in this document is subject to legal disclaimers.
Package
Name
-
-
RF_input
V
V
V
Rev. 2 — 1 March 2011
DS1
GS1
GS2
Description
HSOP16F: plastic, heatsink small outline package;
16 leads (flat)
HSOP16: plastic, heatsink small outline package;
16 leads
BLM6G10-30; BLM6G10-30G
2
6
8
9
COMPENSATED BIAS
TEMPERATURE
Conditions
Conditions
T
2-carrier W-CDMA
T
2-carrier W-CDMA
W-CDMA 860 MHz - 960 MHz power MMIC
case
case
001aan771
= 80 C; P
= 80 C; P
14
RF_output/V
L
L
= 2 W;
= 2 W;
DS2
Min
-
0
-
-
65
-
[1]
[1]
© NXP B.V. 2011. All rights reserved.
Value
7.5
2.3
Max
65
+13
3
9
+150
200
Version
SOT834-1
SOT822-1
Unit
K/W
K/W
3 of 15
Unit
V
V
A
A
C
C