BLM6G10-30 NXP Semiconductors, BLM6G10-30 Datasheet - Page 6

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz

BLM6G10-30

Manufacturer Part Number
BLM6G10-30
Description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
BLM6G10-30_BLM6G10-30G
Product data sheet
Fig 7.
Fig 9.
(dB)
G
(1) f = 940 MHz; V
(2) f = 940 MHz; V
(3) f = 940 MHz; V
(4) f = 880 MHz; V
(5) f = 880 MHz; V
(6) f = 880 MHz; V
(1) T
(2) T
(3) T
p
31
29
27
25
23
21
0
I
One-tone CW power gain as function of output
power and drain-source voltage; typical value
Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on
Single-carrier peak output power (peaks 3 dB compressed) as function of frequency and temperature;
typical values
the CCDF.
Dq1
case
case
case
= 105 mA; I
= 30 C
= 25 C
= 80 C
10
20
(4)
(5)
(6)
DS
DS
DS
DS
DS
DS
Dq2
= 24 V
= 28 V
= 32 V
= 24 V
= 28 V
= 32 V
30
= 288 mA.
(1) (2) (3)
40
P
(W)
L(M)
50
60
40
20
0
820
All information provided in this document is subject to legal disclaimers.
P
001aak505
L
60
(W)
70
Rev. 2 — 1 March 2011
880
BLM6G10-30; BLM6G10-30G
Fig 8.
(dBc)
IMD
940
−20
−30
−40
−50
−60
−70
−80
−90
10
I
f
Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
value
f (MHz)
−1
Dq1
2
= 940.1 MHz.
001aak507
W-CDMA 860 MHz - 960 MHz power MMIC
= 105 mA; I
(1)
(2)
(3)
IMD3
IMD5
IMD7
1000
1
Dq2
= 288 mA; f
10
1
P
= 940 MHz;
L(PEP)
© NXP B.V. 2011. All rights reserved.
001aak506
(W)
10
2
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