BLM6G10-30 NXP Semiconductors, BLM6G10-30 Datasheet - Page 5

• Manufacturer Part Number: BLM6G10-30
• Description: 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLM6G10-30_BLM6G10-30G
Product data sheet
Fig 3.
Fig 5.
(dB)
(dB)
G
G
(1) T
(2) T
(3) T
p
p
35
33
31
29
27
25
36
34
32
30
28
26
24
22
10
880
T
I
efficiency as function of frequency;
typical values
V
carrier spacing = 10 MHz.
efficiency as function of average output power
and temperature; typical values
2-carrier W-CDMA power gain and drain
2-carrier W-CDMA power gain and drain
Dq2
−1
case
case
case
case
DS
= 288 mA; carrier spacing = 10 MHz.
= 28 V; I
(3)
(2)
= 25 C; V
= 30 C
= 25 C
= 85 C
(1)
8.3 Performance curves
Dq1
920
1
DS
Performance curves are measured in a BLM6G10-30G application circuit.
G
G
G
η
= 105 mA; I
D
η
G
p
p
p
= 28 V; P
D
p
L(AV)
Dq2
960
10
= 288 mA; f = 940 MHz;
= 2 W; I
P
f (MHz)
L(AV)
All information provided in this document is subject to legal disclaimers.
001aak501
001aak503
(1)
(2)
(3)
(W)
Dq1
1000
10
= 105 mA;
Rev. 2 — 1 March 2011
2
15
13
11
9
7
5
56
48
40
32
24
16
8
0
(%)
(%)
η
η
D
D
BLM6G10-30; BLM6G10-30G
Fig 4.
Fig 6.
ACPR
IMD3,
(dBc)
(dB)
G
(1) T
(2) T
(3) T
−46
−48
−50
−52
−54
−20
−30
−40
−50
−60
p
10
880
T
I
2-carrier W-CDMA adjacent channel power
ratio (5 MHz) and adjacent channel power ratio
(10 MHz) as function of frequency; typical
values
V
carrier spacing = 10 MHz.
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as function of average output power and
temperature; typical values
Dq2
−1
case
case
case
case
DS
W-CDMA 860 MHz - 960 MHz power MMIC
(3) (2) (1)
= 288 mA; carrier spacing = 10 MHz.
= 28 V; I
= 25 C; V
= 30 C
= 25 C
= 85 C
(3) (2) (1)
IMD3
Dq1
920
1
DS
= 105 mA; I
= 28 V; P
ACPR
ACPR
IMD3
Dq2
L(AV)
960
10
= 288 mA; f = 940 MHz;
= 2 W; I
P
L(AV)
f (MHz)
© NXP B.V. 2011. All rights reserved.
001aak502
001aak504
(W)
Dq1
1000
10
= 105 mA;
2
5 of 15