BLM6G10-30 NXP Semiconductors, BLM6G10-30 Datasheet - Page 8

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz

BLM6G10-30

Manufacturer Part Number
BLM6G10-30
Description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
BLM6G10-30_BLM6G10-30G
Product data sheet
Table 8.
For application circuit, see
Printed-Circuit Board (PCB): Rogers 4350B;
metallization).
[1]
Component
C1, C2, C5, C13, C16
C3, C4, C14, C17
C6, C12, C15
C7
C8, C9
C10, C11
C18
R1
R2
Fig 11. Component layout for class-AB application circuit
American Technical Ceramics type 100A or capacitor of same quality.
R1
V
GS1
See
List of components
V
Table 8
GS2
R2
All information provided in this document is subject to legal disclaimers.
for list of components.
C7
Rev. 2 — 1 March 2011
Figure
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
SMD resistor
V
DS1
C4
C3
BLM6G10-30; BLM6G10-30G
C1
C5
11.
BLM6G1030
BOARD 3 DEV
REV1
C2
C6
r
= 3.5 F/m; thickness = 0.762 mm; Cu (top/bottom
W-CDMA 860 MHz - 960 MHz power MMIC
C8
C9
C12
C15
C13
C16
Value
100 nF
4.7 F; 50 V
68 pF
220 F; 35 V
11 pF
4.3 pF
470 F; 35 V
1.5 k
3.3 k
C10
C14
C17
V
C11
DS2
S1
© NXP B.V. 2011. All rights reserved.
C18
[1]
[1]
[1]
001aan773
Remarks
8 of 15

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