FDMF6707C Fairchild Semiconductor, FDMF6707C Datasheet - Page 15
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDMF6707C
Manufacturer Part Number
FDMF6707C
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMF6707C.pdf
(18 pages)
© 2011 Fairchild Semiconductor Corporation
FDMF6707C • Rev. 1.0.1
PCB Layout Guidelines
Figure 29 provides an example of a proper layout for the
FDMF6707C and critical components. All of the high-
current paths, such as V
copper, should be short and wide for low inductance
and resistance. This technique achieves a more stable
and evenly distributed current flow, along with enhanced
heat radiation and system performance.
The following guidelines are recommendations for the
PCB designer:
1. Input ceramic bypass capacitors must be placed
2. The V
3. An output inductor should be located close to the
4. PowerTrench
5. VCIN, VDRV, and BOOT capacitors should be
6. Include a trace from PHASE to VSWH to improve
7. The layout should include a placeholder to insert a
close to the VIN and PGND pins. This helps reduce
the high-current power loop inductance and the input
current ripple induced by the power MOSFET
switching operation.
addition to being the high-frequency current path
from the DrMOS package to the output inductor, it
also serves as a heat sink for the low-side MOSFET
in the DrMOS package. The trace should be short
and wide enough to present a low-impedance path
for the high-frequency, high-current flow between the
DrMOS and inductor to minimize losses and
temperature rise. Note that the VSWH node is a
high-voltage and high-frequency switching node with
high noise potential. Care should be taken to
minimize coupling to adjacent traces. Since this
copper trace also acts as a heat sink for the lower
FET, balance using the largest area possible to
improve
acceptable noise emission.
FDMF6707C to minimize the power loss due to the
VSWH copper trace. Care should also be taken so
the inductor dissipation does not heat the DrMOS.
stage. The power MOSFETs are effective at
minimizing ringing due to fast switching. In most
cases, no VSWH snubber is required. If a snubber is
used, it should be placed close to the VSWH and
PGND pins. The resistor and capacitor need to be of
proper size for the power dissipation.
placed as close as possible to the VCIN to CGND,
VDRV to CGND, and BOOT to PHASE pins to
ensure clean and stable power. Routing width and
length should be considered.
noise margin. Keep the trace as short as possible.
small-value series boot resistor (R
SWH
DrMOS
copper trace serves two purposes. In
®
MOSFETs are used in the output
cooling
IN
, V
SWH
while
, V
BOOT
OUT
) between the
, and GND
maintaining
15
8. CGND pad and PGND pins should be connected to
9. Ringing at the BOOT pin is most effectively
10. The SMOD# and DISB# pins have weak internal
11. Use multiple
boot capacitor (C
BOOT-to-VSWH loop size, including R
C
resistor may be required when operating near the
maximum rated V
controlling the high-side MOSFET turn-on slew rate
and VSHW overshoot. R
operating margin in synchronous buck designs that
may have noise issues due to ground bounce or high
positive and negative VSWH ringing. However,
inserting a boot resistance lowers the DrMOS
efficiency. Efficiency versus noise trade-offs must be
considered. R
typically effective in reducing VSWH overshoot.
The VIN and PGND pins handle large current
transients with frequency components greater than
100MHz. If possible, these pins should be connected
directly to the VIN and board GND planes. The use
of thermal relief traces in series with these pins is
discouraged since this adds inductance to the
power path. Added inductance in series with the VIN
or PGND pin degrades system noise immunity by
increasing positive and negative VSWH ringing.
the GND plane copper with multiple vias for stable
grounding. Poor grounding can create a noise
transient offset voltage level between CGND and
PGND. This could lead to faulty operation of the gate
driver and MOSFETs.
controlled by close placement of the boot capacitor.
Do not add an additional BOOT to PGND capacitor:
this may lead to excess current flow through the
BOOT diode.
pull-up and pull-down current sources, respectively.
These pins should not have any noise filter
capacitors. Do not to float these pins unless
absolutely necessary.
interconnect top, inner, and bottom layers to help
distribute current flow and heat conduction. Vias
should be relatively large and of reasonably low
inductance. Critical high-frequency components,
such as R
capacitors should be located as close to the
respective DrMOS module pins as possible on the
top layer of the PCB. If this is not feasible, they
should be connected from the backside through a
network of low-inductance vias.
BOOT
, should be as small as possible. The boot
BOOT
BOOT
, C
vias on
BOOT
BOOT
IN
. The boot resistor is effective at
values from 0.5Ω to 2.0Ω are
, the RC snubber, and bypass
) and DrMOS BOOT pin. The
BOOT
each copper
can improve noise
www.fairchildsemi.com
BOOT
area to
and