FDC8886 Fairchild Semiconductor, FDC8886 Datasheet - Page 2

no-image

FDC8886

Manufacturer Part Number
FDC8886
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC8886
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC8886-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDC8886 Rev.C3
©2012 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
θJC
DS(on)
FS
GS(th)
iss
oss
rss
g
SD
ΔT
ΔT
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
is guaranteed by design while R
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward V
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
θCA
Parameter
is determined by the user's board design.
T
a. 78 °C/W when mounted on
J
= 25 °C unless otherwise noted
a 1 in
2
pad of 2 oz copper
I
I
V
V
V
V
V
V
I
V
I
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
DD
DS
= 6.5 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 24 V, V
= 0 V, I
= 20 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 15 V, V
2
DS
Test Conditions
, I
S
D
D
D
= 6.5 A
D
D
GS
DS
GS
GEN
GS
D
= 6.5 A
= 6.5 A,
= 250 μA
= 6.5 A
= 6.5 A, T
= 6.0 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
V
I
D
DD
= 6.5 A
= 15 V
J
= 125 °C
(Note 2)
b.175 °C/W when mounted on
Min
1.2
a minimum pad of 2 oz copper
30
0.86
348
135
Typ
5.3
2.5
1.0
0.8
1.9
1.2
14
18
19
30
25
24
16
11
-6
3
5
1
1
465
180
Max
1.2
100
7.4
3.5
3.0
22
10
www.fairchildsemi.com
25
10
10
19
10
23
36
30
1
mV/°C
mV/°C
Units
nC
nC
nC
nC
nC
pF
pF
pF
ns
μA
nA
ns
ns
ns
ns
Ω
V
V
S
V

Related parts for FDC8886