FDC8886 Fairchild Semiconductor, FDC8886 Datasheet - Page 3

• Manufacturer Part Number: FDC8886
• Manufacturer: Fairchild Semiconductor

FDC8886 Rev.C3
©2012 Fairchild Semiconductor Corporation
Typical Characteristics
25
20
15
10
25
20
15
10
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
5
0
5
0
Figure 3. Normalized On Resistance
Figure 1.
1
0
-75
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
DS
= 10 V
I
V
D
-50
= 5 V
GS
vs Junction Temperature
= 6.5 A
V
= 10 V
0.4
V
DS
GS
T
-25
,
J
On Region Characteristics
2
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
T
J
= 150
0
V
0.8
GS
V
= 4.5 V
μ
o
GS
25
C
s
3
= 6 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
T
1.2
J
J
= -55
T
= 25 °C unless otherwise noted
J
75
= 25
o
C
4
o
o
C
100 125 150
1.6
C )
V
GS
V
GS
= 3.5 V
= 4 V
μ
s
2.0
5
3
0.01
80
60
40
20
0.1
30
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1
0.2
Figure 2.
2
Figure 4.
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
V
SD
T
GS
= 0 V
J
0.4
, BODY DIODE FORWARD VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 150
Normalized On-Resistance
5
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
4
V
I
Source Voltage
D
Source to Drain Diode
GS
,
I
D
DRAIN CURRENT (A)
o
= 3.5 V
= 6.5 A
C
0.6
10
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
T
T
J
J
= 125
= 25
0.8
15
μ
s
T
J
o
o
T
C
= -55
C
J
V
V
= 25
GS
GS
8
o
1.0
= 4.5 V
= 4 V
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C
20
o
V
C
V
GS
GS
μ
= 10 V
= 6 V
s
10
1.2
25