FDC8886 Fairchild Semiconductor, FDC8886 Datasheet - Page 4

• Manufacturer Part Number: FDC8886
• Manufacturer: Fairchild Semiconductor

FDC8886 Rev.C3
©2012 Fairchild Semiconductor Corporation
Typical Characteristics
0.01
0.1
30
10
10
7
6
5
4
3
2
1
Figure 7.
0.01
1
8
6
4
2
0
0.01
0
Figure 9.
Figure 11.
I
D
= 6.5 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
θ
JA
= MAX RATED
1
= 25
V
Switching Capability
DS
= 175
Gate Charge Characteristics
0.1
t
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
o
Unclamped Inductive
C
, TIME IN AVALANCHE (ms)
Q
o
Forward Bias Safe
C/W
g
2
, GATE CHARGE (nC)
0.1
DS(on)
T
J
= 125
T
J
1
V
= 25
DD
3
o
C
= 10 V
V
T
o
T
DD
C
J
J
= 100
= 20 V
= 25 °C unless otherwise noted
4
10
o
V
1
C
DD
= 15 V
100
1 ms
10 ms
100 ms
1 s
10 s
DC
5
μ
100200
s
5
6
4
200
100
500
100
8
6
4
2
0
0.5
10
10
25
Figure 10.
1
10
0.1
Figure 12.
R
-4
f = 1 MHz
V
Current vs Ambient Temperature
GS
θ
Figure 8.
JA
= 0 V
= 78
10
50
-3
V
T
o
DS
C/W
A
Maximum Continuous Drain
,
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE (
10
Single Pulse Maximum
Capacitance vs Drain
t, PULSE WIDTH (sec)
-2
75
1
10
-1
V
V
GS
GS
= 4.5 V
100
= 10 V
1
SINGLE PULSE
R
T
10
A
θ
JA
o
= 25
C )
125
= 175
10
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o
C
100
C
C
C
o
oss
rss
C/W
iss
150
10
30
3