FDMC8030 Fairchild Semiconductor, FDMC8030 Datasheet
FDMC8030
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FDMC8030 Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC8030 FDMC8030 ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev.C ® MOSFET General Description = 12 A This device includes two 40V N-Channel MOSFETs in a dual D Power MLP) package. The package is ...
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... 0.3 mH N-ch device, the negative V rating is for low duty cycle pulse occurence only. No continuous rating is implied. gs ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev 25°C unless otherwise noted 3 μ ...
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... TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability 1000 100 Figure 11. Single Pulse Maximum Power Dissipation ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev 25°C unless otherwise noted J 2000 = 15 V 1000 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev 25°C unless otherwise noted J SINGLE PULSE 155 C/W θ RECTANGULAR PULSE DURATION (sec ...
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... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev.C 6 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...