FDMC8030 Fairchild Semiconductor, FDMC8030 Datasheet - Page 3

• Manufacturer Part Number: FDMC8030
• Description: This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
50
40
30
20
10
Figure 3. Normalized On- Resistance
0
0
Figure 1.
-75
0
1
Figure 5. Transfer Characteristics
V
I
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
D
GS
DS
= 12 A
-50
= 10 V
vs Junction Temperature
= 5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
T
V
1
-25
V
DS
J
GS
On-Region Characteristics
,
GS
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
= 3.5 V
V
0
2
GS
T
J
= 4.5 V
2
= 150
25
V
μ
GS
s
= 10 V
o
C
50
T
μ
J
3
s
= 25°C unless otherwise noted
75
T
3
J
= -55
T
J
o
= 25
100 125 150
C )
V
o
4
GS
C
V
o
GS
C
= 3.2 V
= 3 V
5
4
3
0.001
0.01
0.1
30
25
20
15
10
50
10
5
4
3
2
1
0
5
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
GS
= 0 V
V
T
0.2
SD
T
V
J
J
GS
10
, BODY DIODE FORWARD VOLTAGE (V)
= 25
Normalized On-Resistance
V
= 150
On-Resistance vs Gate to
GS
= 3 V
I
Source Voltage
4
D
Source to Drain Diode
,
,
o
GATE TO SOURCE VOLTAGE (V)
C
DRAIN CURRENT(A)
o
C
0.4
V
GS
20
=3.2 V
μ
T
s
J
0.6
6
= 125
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
D
V
= 12 A
GS
30
o
C
= 4.5 V
0.8
T
J
= -55
T
V
J
8
GS
= 25
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40
o
= 3.5 V
V
C
1.0
GS
o
C
= 10 V
μ
s
1.2
10
50