FDMC8030 Fairchild Semiconductor, FDMC8030 Datasheet - Page 4

• Manufacturer Part Number: FDMC8030
• Description: This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C
Typical Characteristics
10
30
10
1000
Figure 7.
0.001
8
6
4
2
0
1
100
0.1
10
0
10
1
Figure 9.
I
-4
D
= 12 A
Switching Capability
Gate Charge Characteristics
0.01
t
AV
5
Unclamped Inductive
, TIME IN AVALANCHE(ms)
Q
g
, GATE CHARGE(nC)
10
-3
0.1
T
Figure 11. Single Pulse Maximum Power Dissipation
10
V
J
DD
= 125
T
V
J
T
= 15 V
DD
= 25
J
= 25°C unless otherwise noted
= 25 V
o
C
o
C
10
1
V
T
DD
-2
J
15
= 100
= 20 V
o
C
t, PULSE WIDTH (sec)
10 20
20
10
-1
4
2000
1000
100
0.01
1
10
0.1
60
10
1
0.1
0.01
1
Figure 8.
f = 1 MHz
V
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
GS
Figure 10.
J
A
θ
JA
= MAX RATED
= 25
= 0 V
= 155
V
o
V
DS
C
to Source Voltage
DS
0.1
, DRAIN TO SOURCE VOLTAGE (V)
o
Capacitance vs Drain
Operating Area
C/W
, DRAIN to SOURCE VOLTAGE (V)
10
DS(on)
Forward Bias Safe
1
1
SINGLE PULSE
R
T
100
A
θ
JA
= 25
= 155
10
o
C
10
o
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C/W
1 ms
1 s
10 s
DC
100
10 ms
100 ms
1000
C
C
C
100200
iss
oss
rss
μ
s
40